Title of article
Peculiarities of field emission from silicon carbide films
Author/Authors
A.A. Evtukh، نويسنده , , N.I. Klyui، نويسنده , , V.G. Litovchenko، نويسنده , , Yu.M. Litvin، نويسنده , , O.B. Korneta، نويسنده , , V.M. Puzikov، نويسنده , , A.V. Semenov، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
5
From page
237
To page
241
Abstract
The emission properties of silicon carbide films were investigated. The SiC films were deposited from separated ion beams. The deposition of the films on silicon tips allows us to improve field emission strongly. The doping of silicon carbide films with rare-earth elements has sufficient influence on electron field emission parameters. The shape and the radius curvature of the tips are very important at electron emission.
Keywords
Rare-earth elements , Doping , Pr , ER , Field emission , Silicon carbide
Journal title
Applied Surface Science
Serial Year
2003
Journal title
Applied Surface Science
Record number
998584
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