Zinc determination in A3B5 semiconductors

The results of zinc ion yield measurements obtained by using GaX matrices (X ¼ N, P, As, Sb) under both cesium and oxygen primary ion bombardments are investigated. Excellent detection limits are achieved under O2þ primary ion bombardment monitoring the GaZnþ secondary. The swelling dependence on analytical conditions and accuracy of measurements of zinc implanted GaSb samples is investigated. # 2004 Published by Elsevier B.V.