Author/Authors :
Tobias Wirtz، نويسنده , , H.-N. Migeon، نويسنده ,
Abstract :
In order to optimize SIMS analyses using the presence of reactive Cs for the purpose of enhancing negative secondary ion
emission or working in the MCsxþ mode, we have developed a column that delivers a collimated and adjustable stream of neutral
Cs atoms to be deposited on the surface of the sample while this one is being analyzed. Using this new column, it was possible to
introduce an analysis technique consisting of a Xyþ ion bombardment (where X stands for any element excepting Cs)
accompanied by a simultaneous deposition of Cs0 at the surface of the sample. This experimental technique permits a successful
decoupling of the sputtering and Cs introduction processes by avoiding the constraints imposed by an energetic Csþ ion
bombardment. As a consequence, it becomes possible to optimize simultaneously the sensitivity of the analysis, by carefully
adjusting the Cs concentration to its optimum value, and the depth resolution of the analysis, by choosing adequate primary
bombardment conditions. In this paper, we will describe the new Cs0 column, which is based on an evaporation of pure metallic
Cs, and outline its performances in terms of deposition rates, stability, beam dimensions and purity of the Cs deposit.
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