Title of article
The defect-related photoluminescence from Si ion-beam-mixed SiO2/Si/SiO2 films
Author/Authors
J.H Son، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
6
From page
288
To page
293
Abstract
We have studied the photoluminescence characteristics associated with the defects produced by Siþ ion-beam mixing of SiO2/
Si/SiO2 films. The photoluminescence peaks show a strong dependence on annealing process before ion-beam mixing. Using
electron spin resonance and X-ray photoelectron spectroscopy, the relationship between the photoluminescence peaks and the
defects is discussed.
# 2004 Elsevier B.V. All rights reserved
Keywords
Ion-beam mixing , Photoluminescence , Radiative defects
Journal title
Applied Surface Science
Serial Year
2004
Journal title
Applied Surface Science
Record number
998671
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