Title of article
Adsorption of Si atom on H-terminated Si(0 0 1)-2 × 1 surface
Author/Authors
Tomihiro Hashizume، نويسنده , , Hiroshi Kajiyama، نويسنده , , Yuji Suwa، نويسنده , , Seiji Heike، نويسنده , , S. Matsuura، نويسنده , , Jun Nara، نويسنده , , Takahisa Ohno، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
4
From page
15
To page
18
Abstract
Adsorption and diffusion of Si atoms on a hydrogen-terminated Si(0 0 1)-2×1 surface is studied using scanning tunneling microscopy/spectroscopy and first-principles total-energy calculations. We find that the Si atoms randomly adsorb at the bridge site of Si dimers forming SiH2 clusters at room temperature, and move into the off-centred inter-bridge site after annealing at 250 °C.
Keywords
Adsorption , Silicon , Surface , Hydrogen termination , First principles , STM
Journal title
Applied Surface Science
Serial Year
2003
Journal title
Applied Surface Science
Record number
998717
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