Author/Authors :
Tomihiro Hashizume، نويسنده , , Hiroshi Kajiyama، نويسنده , , Yuji Suwa، نويسنده , , Seiji Heike، نويسنده , , S. Matsuura، نويسنده , , Jun Nara، نويسنده , ,
Takahisa Ohno، نويسنده ,
Abstract :
Adsorption and diffusion of Si atoms on a hydrogen-terminated Si(0 0 1)-2×1 surface is studied using scanning tunneling microscopy/spectroscopy and first-principles total-energy calculations. We find that the Si atoms randomly adsorb at the bridge site of Si dimers forming SiH2 clusters at room temperature, and move into the off-centred inter-bridge site after annealing at 250 °C.
Keywords :
Adsorption , Silicon , Surface , Hydrogen termination , First principles , STM
