Author/Authors :
R.، Lai, نويسنده , , G.P.، Li, نويسنده , , M.، Barsky, نويسنده , , Y.C.، Chou, نويسنده , , Hua، Jun نويسنده , , P.، Nam, نويسنده , , R.، Grundbacher, نويسنده , , H.K.، Kim, نويسنده , , Y.، Ra, نويسنده , , M.، Biedenbender, نويسنده , , E.، Ahlers, نويسنده , , A.، Oki, نويسنده , , D.، Streit, نويسنده ,
Abstract :
A novel low-temperature nitride passivation technique using high-density inductively coupled plasma chemical vapor deposition (HD-ICP-CVD) with SiH/sub 4//N/sub 2/ chemistries to passivate 0.15 (mu)m pseudomorphic GaAs HEMTs has been developed for the first time. HD-ICP-CVD nitrides have higher density and lower hydrogen concentration than those of nitrides deposited by plasma-enhanced CVD (PECVD). Furthermore, HD-ICP-CVD passivated devices exhibit better performance in reverse breakdown voltage, transconductance, and cutoff frequency than those of PECVD passivated devices. The results achieved here warrant the applications of HD-ICP-CVD for next-generation nitride passivation in compound semiconductor technologies.
