Anisotropy of lateral growth rate in liquid phase epitaxy of {0 0 1} InP

The angular dependences of the lateral growth rate are determined as the functions of growth temperature and growth time in liquid phase epitaxy of (0 0 1) InP at low growth temperature of 330–450 °C. From the deformation of artificially made tables after epitaxy, it is shown that the lateral growth rate has a strong anisotropy in [1 1 0] direction especially at low growth temperature (Tg<400 °C). This indicated that kink density was high in [1 1 0] direction on InP(0 0 1) surface. It is also shown that the anisotropy of lateral growth rate decreases as the growth temperature becomes high.