Title of article
Depth profiling of oxynitride film formed on Si(1 0 0) by photon energy dependent photoelectron spectroscopy
Author/Authors
K. Nishizaki، نويسنده , , H. Nohira، نويسنده , , K. Takahashi، نويسنده , , N. Kamakura، نويسنده , , Y. Takata، نويسنده , , S. Shin، نويسنده , , K. Kobayashi، نويسنده , , N. Tamura، نويسنده , , K. Hikazutani، نويسنده , , T. Hattori، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
4
From page
287
To page
290
Abstract
Si 2p and N 1s spectra arising from a oxynitride film formed on Si(1 0 0) surface were measured in the photon energy range from 556 to 1471 eV, where the electron escape depth in SiO2 changes from 1.68 to 3.80 nm. It was found for the first time that the photon energy dependence of N 1s and Si 2p photoelectron spectra can be nearly reproduced if the depth profile of nitrogen atoms is known.
Keywords
Depth profiling , Oxynitride , Synchrotron radiation , Photoelectron spectroscopy
Journal title
Applied Surface Science
Serial Year
2003
Journal title
Applied Surface Science
Record number
998762
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