Title of article :
In situ observation of step-terrace structures on MOVPE grown InP(0 0 1) by using grazing X-ray scattering
Author/Authors :
T. Kawamura، نويسنده , , S. Bhunia، نويسنده , , Y. Watanabe، نويسنده , , S. Fujikawa، نويسنده , , J. Matsui، نويسنده , , Y. Kagoshima، نويسنده , , Y. Tsusaka، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Abstract :
Step-terrace structures on MOVPE grown InP(0 0 1) surface were investigated by using grazing X-ray scattering. After buffer layers were formed on the substrate, X-ray scattering profiles were measured in the same chamber without exposing the sample to air. Small peaks were observed at the tail of the specular reflections, suggesting the in-plane periodicity of surface morphology. The azimuth angle dependence of peak position suggests a one-dimensional structure on the surface, and considering the AFM images of the sample, the bunched step-terrace structure toward [1 0 0] is the reason of this structure. Analyses based on a simple grating approximation shows the period of the one-dimensional structure is about 550 nm, which is consistent with the spacing value determined from AFM images.
Keywords :
Surface morphology , Semiconductors , III–V , X-ray scattering , Surface step , MOVPE
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science