Title of article
Compensated back-channel TFTs in hydrogenated amorphous silicon
Author/Authors
J.M.، Shannon, نويسنده , , E.G.، Gerstner, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-24
From page
25
To page
0
Abstract
Compensated back-channel inverted staggered TFTs have been made in a-Si:H. Donor impurities were implanted to form a good source and drain ohmic contact followed by an acceptor implant to compensate the channel region. TFTs have been made with no degradation of channel mobility due to the implants and a leakage current between source and drain comparable with the best TFTs made using conventional etched back-channel technology.
Keywords
heat transfer , Analytical and numerical techniques , natural convection
Journal title
IEEE Electron Device Letters
Serial Year
2003
Journal title
IEEE Electron Device Letters
Record number
99878
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