• Title of article

    Theoretical study on stable structures and diffusion mechanisms of B in SiO2

  • Author/Authors

    Minoru Otani، نويسنده , , Kenji Shiraishi، نويسنده , , Atsushi Oshiyama، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2003
  • Pages
    7
  • From page
    490
  • To page
    496
  • Abstract
    We present first-principle total-energy calculations that clarify stable structures of B and mechanisms of B diffusion in SiO2. We find that a B atom takes a variety of stable and metastable geometries depending on its charge state. We also find that atomic rearrangements during the diffusion manifest a wealth of bonding feasibility in SiO2 and that the calculated activation energy agrees with the experimental data available.
  • Keywords
    SiO2 , Energy barrier , Boron penetration , Diffusion path , Atomic boron , First-principle calculations
  • Journal title
    Applied Surface Science
  • Serial Year
    2003
  • Journal title
    Applied Surface Science
  • Record number

    998797