Title of article
Theoretical study on stable structures and diffusion mechanisms of B in SiO2
Author/Authors
Minoru Otani، نويسنده , , Kenji Shiraishi، نويسنده , , Atsushi Oshiyama، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
7
From page
490
To page
496
Abstract
We present first-principle total-energy calculations that clarify stable structures of B and mechanisms of B diffusion in SiO2. We find that a B atom takes a variety of stable and metastable geometries depending on its charge state. We also find that atomic rearrangements during the diffusion manifest a wealth of bonding feasibility in SiO2 and that the calculated activation energy agrees with the experimental data available.
Keywords
SiO2 , Energy barrier , Boron penetration , Diffusion path , Atomic boron , First-principle calculations
Journal title
Applied Surface Science
Serial Year
2003
Journal title
Applied Surface Science
Record number
998797
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