Title of article
RF capacitance-voltage characterization of MOSFETs with high leakage dielectrics
Author/Authors
J.، Schmitz, نويسنده , , F.N.، Cubaynes, نويسنده , , R.J.، Havens, نويسنده , , R.، de Kort, نويسنده , , A.J.، Scholten, نويسنده , , L.F.، Tiemeijer, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-36
From page
37
To page
0
Abstract
We present a MOS Capacitance-Voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm/sup 2/. The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter extraction in the full range of accumulation, depletion, and inversion.
Keywords
natural convection , heat transfer , Analytical and numerical techniques
Journal title
IEEE Electron Device Letters
Serial Year
2003
Journal title
IEEE Electron Device Letters
Record number
99882
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