Author/Authors :
Kim، Young-Hee نويسنده , , S.، Krishnan, نويسنده , , Kang، Chang Seok نويسنده , , Cho، Hag-Ju نويسنده , , K.، Onishi, نويسنده , , Choi، Rino نويسنده , , J.C.، Lee, نويسنده , , M.S.، Akbar, نويسنده ,
Abstract :
Breakdown voltage distribution, Weibull slopes, and area scaling factors have been investigated for HfO/sub 2/ gate dielectrics in order to gain a better understanding of the breakdown mechanism. Weibull slope of thick HfO/sub 2/ (e.g., (beta)~4 for EOT=2.5 nm) is smaller than that of SiO/sub 2/ with similar physical thickness, whereas (beta) of the thinner HfO/sub 2/ (e.g., (beta)~2 for EOT=1.4 nm) is similar to that of SiO/sub 2/. The implication of the thickness dependence of (beta) is discussed.
