Simulation of the loading effect

The loading effect during plasmochemical etching (PCE) of silicon in a CF4+O2 plasma is considered. The loading effect is considered including homogeneous reactions of generation and recombination of chemically active species. The model of chemical composition of CF4+O2 plasma is related to the model of plasmochemical etching of silicon in CF4+O2 plasma to achieve the goal. Using the proposed model the influence of etchable surface area on concentration of F atoms in the plasma and etching rate was determined. It was found that the loading effect is more pronounced at low O2 content in the feed. At low values of the etchable surface area, conversion of F atoms to the reaction products decreases with the increase of O2 content in the feed.