1710-V 2.77-m(omega)cm/sup 2/ 4H-SiC trenched and implanted vertical junction field-effect transistors

This letter reports the demonstration of a 4H-SiC trenched and implanted vertical-junction field-effect transistor (TI-VJFET). The p/sup +/n junction gates are created on the sidewalls of deep trenches by angled Al implantation, which eliminates the need for epitaxial regrowth during the JFET fabrication. Blocking voltages up to 1710 V has been achieved with a voltage supporting drift layer of only 9.5 (mu)m by using a two-step junction termination extension. The TI-VJFET shows a low specific on-resistance R/sub ON-sp/ of 2.77m(omega)cm/sup 2/, corresponding to a record high value of V/sub B//R/sub ON-sp/ equal to 1056 MW/cm/sup 2/.