Author/Authors :
O. Yilmazoglu، نويسنده , , D. Pavlidis، نويسنده , , Yu.M. Litvin، نويسنده , , S. Hubbard، نويسنده , , I.M. Tiginyanu، نويسنده , , K. Mutamba، نويسنده , , H.L. Hartnagel، نويسنده , , V.G. Litovchenko، نويسنده , , A. Evtukh، نويسنده ,
Abstract :
Whisker structures and quantum dots fabricated by photoelectrochemical (PEC) etching of undoped and doped metalorganic chemical vapor deposition (MOCVD)-grown GaN (2×1017 or 3×1018 cm−3) are investigated in relation with their field-emission characteristics. Different surface morphologies, corresponding to different etching time and photocurrent, results in different field-emission characteristics with low turn-on voltage down to 4 V/μm and the appearance of quantum-size effect in the I–V curves.
