Ga+ primary ion ToF-SIMS fragment pattern of inorganic compounds and metals

Regularity of Ga+ primary ion ToF-SIMS fragment pattern of inorganic compounds is discussed. For an inorganic compound as formulated M–A, where the valence of cation M is +n and that of anion A is −p, the chemical composition of appeared ToF-SIMS fragment are MxAy, which satisfy the rule nx≥py+1 for positive ion fragments and nx≤py+1 for negative ones. For example, for oxide fragment of chemical composition, MxAy (valence of M is +n), the fragment obeys the rule nx≥2y+1 for positive ions and nx≤2y+1 for negative ones, respectively. The regularity of ToF-SIMS fragment patterns of sulfides, nitrates, sulfates etc. is discussed.