Silicon tunnel diodes formed by proximity rapid thermal diffusion

We demonstrate the first silicon tunnel diodes (TDs) formed using proximity rapid thermal diffusion and spin-on diffusants. Room temperature peak-to-valley current ratio of 2 is obtained at approximately 100 A/cm/sup 2/ peak current density. Secondary ion mass spectroscopy is used to compare proximity rapid thermal diffusion with rapid thermal diffusion from spin-coated diffusants in direct contact with a device wafer. The proximity rapid thermal diffusion approach provides a cleaner wafer surface for subsequent processing and yields TDs with good local uniformity.