Title of article :
Implantation profiles for low energy electrons in metals: scaling properties
Author/Authors :
F. Z. Chaoui، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
6
From page :
114
To page :
119
Abstract :
The scaling of electron implantation profiles with incident energies over the range 0.5–4 keVat normal angle of incidence are presented using the Monte Carlo scheme to generate stopping profiles in semi-infinite Al and Au. A simple scaling relationship which reduced the stopping profiles onto a single universal curve for that studied material is proposed with only two fitting parameters instead of four parameters previously reported in the literature. This permits accurate profiles for low energy electrons in metals to be obtained in a simple way that does not require any recourse to Monte Carlo calculations in the generation of electron stopping profiles. # 2003 Elsevier B.V. All rights reserved
Keywords :
Electron implantation , Monte Carlo scheme , Low energy electrons
Journal title :
Applied Surface Science
Serial Year :
2004
Journal title :
Applied Surface Science
Record number :
998998
Link To Document :
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