Title of article :
Implantation profiles for low energy electrons in metals:
scaling properties
Author/Authors :
F. Z. Chaoui، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Abstract :
The scaling of electron implantation profiles with incident energies over the range 0.5–4 keVat normal angle of incidence are
presented using the Monte Carlo scheme to generate stopping profiles in semi-infinite Al and Au. A simple scaling relationship
which reduced the stopping profiles onto a single universal curve for that studied material is proposed with only two fitting
parameters instead of four parameters previously reported in the literature. This permits accurate profiles for low energy
electrons in metals to be obtained in a simple way that does not require any recourse to Monte Carlo calculations in the
generation of electron stopping profiles.
# 2003 Elsevier B.V. All rights reserved
Keywords :
Electron implantation , Monte Carlo scheme , Low energy electrons
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science