Title of article
Analysis of gate shot noise in MOSFETs with ultrathin gate oxides
Author/Authors
C.، Fiegna, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-107
From page
108
To page
0
Abstract
The impact of gate shot noise associated with gate leakage current in MOSFETs is studied by means of analytical models and numerical device simulation. The effects of shot noise on the main two-port noise parameters (minimum noise figure, equivalent noise resistance, and optimum source admittance) and their dependence on oxide thickness and on the level of tunneling leakage current are analyzed.
Keywords
heat transfer , natural convection , Analytical and numerical techniques
Journal title
IEEE Electron Device Letters
Serial Year
2003
Journal title
IEEE Electron Device Letters
Record number
99903
Link To Document