Abstract :
K2NiF4-type Sr2Rh1 xRuxO4 (0 x 1) composition-spread films were fabricated on (LaAlO3)0.3–(Sr2AlTaO6)0.7 (LSAT)
substrate by using the combinatorial PLD method. From a temperature spread combinatorial deposition, Sr2RhO4 (x ¼ 0) is
found to grow epitaxially only in a narrow temperature range, i.e. 735 15 8C. By varying the composition and temperature
along x and y axes of the substrate, respectively, two-dimensional (2D) libraries of Sr2Rh1 xRuxO4 (0 x 1) films were
fabricated to map the growth temperature dependence of film crystallinity for the full range of x ¼ 0–1. The optimum epitaxial
growth temperature exhibited clear dependence on the compositional variation, x. From measurements of the electric
conductivity of the films, metal–insulator–metal transitions were detected as the compositional parameter x increased from
0 to 1.
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