Title of article :
Electrical properties of ZrO2 films on Si1 x yGexCy
epitaxial layers
Author/Authors :
S. Chatterjee، نويسنده , , G.K. Dalapati، نويسنده , , S.K. Samanta، نويسنده , , C.K. Maiti، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Abstract :
Deposition and electrical properties of high dielectric constant (high-k) ultrathin ZrO2 films on partially strain-compensated
Si1 x yGexCy/n-Si substrates are reported. Metal insulator semiconductor (MIS) structures were used for high frequency
capacitance–voltage (C–V), current–voltage (I–V), and Fowler-Nordheim (F-N) constant current stressing studies.
# 2003 Elsevier B.V. All rights reserved
Keywords :
dielectric constant , electrical properties , Epitaxial layers
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
