Title of article
Design and optimization of a 200 GHz SiGe HBT collector profile by TCAD
Author/Authors
Andreas D. Strickera، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
6
From page
324
To page
329
Abstract
A novel simulation assisted investigation was used to obtain the optimum collector design of a 200 GHz silicon–germanium
(SiGe) hetero junction bipolar transistor (HBT) for manufacturing. Technology computer aided design (TCAD) tools were
applied in a stepwise methodology to explore the large and complex design space and to fully understand the tradeoffs between
all relevant HBT performance parameters.
# 2003 Elsevier B.V. All rights reserved
Keywords
Hetero bipolar junction transistor , SiGe , BJT , Collector doping profile , TCAD , Design methodology , HBT
Journal title
Applied Surface Science
Serial Year
2004
Journal title
Applied Surface Science
Record number
999212
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