Title of article
The effect of C on emitter–base design for a single-polysilicon SiGe:C HBT with an IDP emitter
Author/Authors
Erik Haralson*، نويسنده , , Erdal Suvar، نويسنده , , Gunnar Malm، نويسنده , , Henry Radamson، نويسنده , , Yongbin Wang، نويسنده , , Mikael O¨ stling، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
6
From page
330
To page
335
Abstract
A differential epitaxy SiGe:C heterojunction bipolar junction transistor (HBT) design is reported and used to study the effect
of carbon on junction formation as well as the effect of lateral design parameters on ac and dc performance. The device exhibits a
high current gain (b) of 1700 and a BVCEO of 1.8 V. The peak cutoff frequency ( fT) and maximum oscillation frequency ( fMAX)
are 73 and 17 GHz, respectively. The effect of emitter overlap on fT was minimal, but it had a strong impact on dc performance.
LOCOS opening size strongly impacted both ac and dc performance. In addition, the effect of carbon, base cap thickness, and
rapid thermal anneal (RTA) temperature on the emitter–base (E–B) junction formation was studied.
# 2003 Elsevier B.V. All rights reserved
Keywords
SiGe:C , HBT , Carbon , IDP emitter
Journal title
Applied Surface Science
Serial Year
2004
Journal title
Applied Surface Science
Record number
999213
Link To Document