Author/Authors :
Erdal Suvar، نويسنده , , E. Haralson، نويسنده , , H.H. Radamson، نويسنده , , Y.-B. Wang، نويسنده , ,
J.V. Grahn، نويسنده , , B.G. Malm، نويسنده , , M. O¨ stling، نويسنده ,
Abstract :
Sources of base-collector and base-emitter leakage current in a SiGeC-based heterojunction bipolar transistor (HBT) with a
selectively grown and chemical–mechanical polished (CMP) collector are discussed. Transmission electron microscopy and
electrical measurement have been applied to investigate the leakage current. It has been demonstrated that the edge-located
defects generated by selective epitaxy process are the origin of the junction leakage.
# 2003 Elsevier B.V. All rights reserved
Keywords :
SiGeC , bipolar , HBT , selective epitaxial growth , Chemical–mechanical polishing , Leakage
