Comparison of state-of-the-art bipolar compact models for SiGe-HBTs

Vertical bipolar inter-company (VBIC) and high current model (HICUM) have been applied for dc modeling of state-of-theart SiGe-HBTs. The models include improved Early effect, quasi-saturation, substrate parasitic, avalanche multiplication, and self-heating. Several dc parameters of the devices have been extracted from SiGe-HBTs and implemented in the VBIC and HICUM models. A comparison is made also with the SGP model. The usefulness and accuracy of the VBIC and HICUM models for SiGe-HBTs are demonstrated by way of comparison of simulated and measured room temperature device dc data. # 2003 Elsevier B.V. All rights reserved