Title of article :
A 4.4 to 5 GHz SiGe low noise amplifier
Author/Authors :
Paolo Crippa، نويسنده , , Simone Orcioni، نويسنده , , Francesco Ricciardi، نويسنده , , Simone Orcioni and Claudio Turchetti ، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
5
From page :
429
To page :
433
Abstract :
This paper describes a low noise amplifier (LNA), designed for a 0.25 mmSiGe process, operating in the 4.4–5 GHz band with a noise figure of 2.2 dB. A power gain of 12.8 dB at 5 GHz has been achieved with a power consumption of 23.77 mWusing a 2 V power supply. The input power at 1 dB output power compression is 6:2 dBm. # 2003 Elsevier B.V. All rights reserved.
Keywords :
RF , sIgE , HBT , low noise amplifier
Journal title :
Applied Surface Science
Serial Year :
2004
Journal title :
Applied Surface Science
Record number :
999232
Link To Document :
بازگشت