Title of article :
A DC–5 GHz NMOSFET SPDT T/R switch in 0.25-mm
SiGe BiCMOS technology
Author/Authors :
Paolo Crippa، نويسنده , , Simone Orcioni*، نويسنده , , Francesco Ricciardi، نويسنده , , Simone Orcioni and Claudio Turchetti ، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Abstract :
In this paper, the design of a fully integrated DC–5 GHz NMOS single-pole double throw (SPDT) transmit/receive (T/R)
switch for radio-frequency (RF) applications in a 0.25-mm SiGe BiCMOS/RFCMOS technology, is presented. The switch
insertion loss is <1.4 dB, the isolation is >30.1 dB, all over the 0–5 GHz band, and the return loss is >19.9 dB in the 0.8–1 GHz
band and is >10.2 dB in the 0–0.8 GHz and 1–5 GHz bands.
# 2003 Elsevier B.V. All rights reserved
Keywords :
CMOS , sIgE , SPDT , RF , T/R switch
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
