Electrical properties and thermal stability of CVD HfOxNy gate dielectric with poly-Si gate electrode

High-quality, ultrathin chemical vapor deposition (CVD) hafnium oxynitride (HfOxNy) gate dielectric with polysilicon (Si) gate electrode has been investigated for the first time. This CVD HfOxNy gate dielectric film remains amorphous after 950 (degree)C N/sub 2/ annealing. Compared with HfO/sub 2/ films with poly-Si gate electrode and similar equivalent oxide thickness (EOT), CVD HfOxNy shows significantly reduction in leakagecurrent density and boron penetration and superior thermal and electrical stability.