Photoluminescence of Er-doped hydrogenated amorphous silicon nitride

Er photoluminescence (Er PL) and dangling bonds (DBs) of annealed Er-doped hydrogenated amorphous silicon nitride (a- SiN:H(Er)) with various concentrations of nitrogen are studied in the temperature range 62–300 K. Post-annealing process is employed to change the DBs density of a-SiN:H(Er). PL spectra, DBs density and H, N concentrations are measured. The intensity of Er PL displays complicated relation with Si DBs density within the annealing temperature range 200–500 8C. The intensity of Er PL first increases with decreasing density of Si dangling bonds owing to the structural relaxation up to 250 8C, and continues to increase up to 350 8C even though the density of Si DBs increases due to the improvement of symmetry environment of Er3þ. # 2003 Elsevier B.V. All rights reserved