Title of article :
Interfacial reactions between RF sputtered CeO2 film
and Si(1 0 0) substrate
Author/Authors :
Ha-Yong Lee، نويسنده , , Young Cheol Lee، نويسنده , ,
Young Pyo Hong، نويسنده , , Kyung Hyun Ko، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Abstract :
The crystallized CeO2 films were grown on Si(1 0 0) wafer by RF magnetron sputtering. For measurements of those films,
CeO2 films were analyzed with XRD, SEM, AES, RBS, and TEM. CeO2 films by sputtering were crystallized with (1 1 1) plane
without increasing substrate temperature and annealed films’ orientation was not changed. For interaction between CeO2 and Si
substrate, no secondary phase was observed while SiO2 layers were generated between CeO2 and Si substrate when CeO2 films
deposited with each condition were annealed in the air and N2 atmosphere. For this reason, it was assumed that Si substrate was
oxidized by excess oxygen in CeO2 films during annealing.
# 2004 Elsevier B.V. All rights reserved.
Keywords :
Secondary phase , Si(1 0 0) , CeO2 , SiO2 , RF magnetron sputtering
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science