Author/Authors :
H.، Shang, نويسنده , , H.، Okorn-Schimdt, نويسنده , , J.، Ott, نويسنده , , P.، Kozlowski, نويسنده , , S.، Steen, نويسنده , , E.C.، Jones, نويسنده , , H.-S.P.، Wong, نويسنده , , W.، Hanesch, نويسنده ,
Abstract :
In this letter, we report germanium (Ge) p-channel MOSFETs with a thin gate stack of Ge oxynitride and lowtemperature oxide (LTO) on bulk Ge substrate without a silicon (Si) cap layer. The fabricated devices show 2 * higher transconductance and ~ 40% hole mobility enhancement over the Si control with a thermal SiO/sub 2/ gate dielectric, as well as the excellent subthreshold characteristics. For the first time, we demonstrate Ge MOSFETs with less than 100-mV/dec subthreshold slope.
