Nanometer silicon thin films prepared by HF sputtering at low temperature

Nanometer silicon thin films have been developed by high-frequency (HF) sputtering at low temperature. Dark and photo I–V characteristics of the films are measured at room temperature, and the result shows that the films have the Coulomb blockade effect. The average size of the nano-crystallines which are embedded in the amorphous matrix is about 10 nm. Optical gap of such films is >2.0 eV. All the films are prepared at temperature lower than 150 8C. # 2004 Published by Elsevier B.V.