Abstract :
A detailed study of the effects of the ageing on the characteristic parameters of polyaniline/p-type Si/Al structure has been
presented. The polyaniline film has been formed on a p-type Si substrate by means of an anodization process. The polyaniline/p-
Si/Al structure has demonstrated clearly rectifying behavior by the current–voltage (I–V) curves studied at room temperature.
The current–voltage curves of the structure have been measured immediately, 15, 30, 60, 90 and 120 days after fabrication of the
polyaniline/p-Si/Al structure. It has been seen that the characteristic parameters, such as barrier height (BH), ideality factor and
series resistance of polyaniline/p-type Si/Al structure have slowly changed with increasing ageing time. The diode shows nonideal
I–V behavior with an ideality factor greater than unity that can be ascribed to the interfacial layer, the interface states and
the series resistance.
# 2004 Elsevier B.V. All rights reserved
