Submicron InP-InGaAs single heterojunction bipolar transistors with f/sub T/ of 377 GHz

Submicron InP-InGaAs-based single heterojunction bipolar transistors (SHBTs) are fabricated to achieve recordbreaking speed performance using an aggressively scaled epitaxial structure coupled with a submicron emitter process. SHBTs with dimensions of 0.35 *16 (mu)m have demonstrated a maximum current gain cutoff frequency f/sub T/ of 377 GHz with a simultaneous maximum power gain cutoff frequency f/sub MAX/ of 230 GHz at the current density Jc of 650 kA/cm/sup 2/. Typical BV/sub CEO/ values exceed 3.7 V.