Author/Authors :
M.Y.، Yang, نويسنده , , C.H.، Huang, نويسنده , , A.، Chin, نويسنده , , Zhu، Chunxiang نويسنده , , M.F.، Li, نويسنده , , Kwong، Dim-Lee نويسنده ,
Abstract :
The authors have obtained good MIM capacitor integrity of high-capacitance density of 10 fF/(mu)m/sup 2/ using high-(kappa) AlTaO/sub x/ fabricated at 400(degree)C. In addition, small voltage dependence of capacitance of <600 ppm (quadratic voltage coefficient of only 130 ppm/V/sup 2/) is obtained at 1 GHz using their mathematical derivation from measured high-frequency S parameters. These good results ensure the high-(kappa) AlTaO/sub x/ MIM capacitor technology is useful for high-precision circuits operated at the RF frequency regime.
