Title of article
Toward accurate in-depth profiling of As and P ultra-shallow implants by SIMS
Author/Authors
A. Merkulov، نويسنده , , E. de Chambost، نويسنده , , M. Schuhmacher، نويسنده , , J. P. Pérès، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
5
From page
640
To page
644
Abstract
A new technique is proposed for the depth profiling of low energy As and P implants. We show that monitoring the
monatomic negatively charged ions of As and P , using oxygen backfilling (flooding) in combination with low energy Csþ
sputtering, improves the sensitivity of SIMS profiling and removes the variation of the ion yield at the native oxide/silicon
interface.
# 2004 Elsevier B.V. All rights reserved
Keywords
Phosphorus , depth profile , arsenic , SIMS , Ion beam induced transient effect
Journal title
Applied Surface Science
Serial Year
2004
Journal title
Applied Surface Science
Record number
999674
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