Energy and angular dependence of the sputter yield and ionization yield of Ge bombarded by O2þ

The angular dependence of the Ge sputter yield is reported for primary beam energies between 270 and 3 keV. For energies above 1 keV no full oxidation occurs, whereas in the sub-keV energy range, full oxidation of the Ge is possible. The oxidation state and the ionization probability change very abruptly as function of the incidence angle. The length of the transient is angle independent at 3 keV, while there is a clear angular dependence of the transient for a primary beam of 500 eV O2. # 2004 Elsevier B.V. All rights reserved