SIMS depth profiling of SiGe:C structures in test pattern areas using low energy cesium with a Cameca IMS Wf

In this paper, we describe our utilization of SIMS to support development of new SiGe:C structures for BiCMOS industrial processes. The goal is to perform quantitative germanium and carbon depth profiles in test areas of 300 mm 300 mm with optimum depth resolution and detection limits. # 2004 Elsevier B.V. All rights reserved