Optimization of SIMS analyses performed in the MCSxþ mode by using an in situ deposition of CS

In order to optimize the advantageous quantification technique consisting in analyzing MCsxþ clusters, we used the new Cs0 column installed on the Cation Mass Spectrometer (CMS) and introduced an analysis technique consisting of an ion bombardment accompanied by a simultaneous deposition of Cs0 at the surface of the sample. This experimental technique permits a successful decoupling of the sputtering and Cs introduction processes by avoiding the constraints imposed by an energetic Csþ ion bombardment. In order to investigate numerous aspects of the mentioned analytical technique, analyses were performed on three different samples (Al, Si, Ni) using a Gaþ ion bombardment. In this paper, we will present an overview of the obtained results. We will deal in particular with the Cs concentrations reached during the analyses and the behavior of the measured MCsxþ signals.We show in this context that the values of the Cs concentration and of the useful yields only depend on the ratio between the erosion and deposition rates, but not on the individual values of these two rates. # 2004 Elsevier B.V. All rights reserved