The influence of C60 as intermediate on the diamond nucleation on copper substrate in HFCVD

The diamond films on copper substrates using C60 as intermediate have been grown by the hot filament chemical vapor deposition (HFCVD) technique. Scanning electron microscopy (SEM) and micro-Raman spectra were used to study the process of diamond nucleation. The UV-light pretreatment was beneficial for improving the diamond nucleation. The temperature of the substrate is very important. The C60 molecule layers with UV-light pretreatment could increase the density of diamond nuclei on copper substrates and enhance the adherence between the copper substrates and diamond films. The long induction time for forming graphite intermediate is not necessary.