Title of article
Lattice deformation in laser-irradiated silicon crystal studied by picosecond X-ray diffraction
Author/Authors
Hiroaki Kishimura، نويسنده , , Akio Yazaki، نويسنده , , Yoichiro Hironaka، نويسنده , , Kazutaka G. Nakamura، نويسنده , , Ken-ichi Kondo، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
4
From page
314
To page
317
Abstract
Lattice deformation in laser-irradiated Si(1 1 1) has been studied by picosecond X-ray diffraction at a delay time of 350 ps. The rapid thermal expansion (0.24% at maximum) was observed at 2.0 GW/cm2 irradiation. By irradiation above dielectric breakdown threshold (10.0 GW/cm2), the intense lattice compression (2.1% at maximum) was observed. The compression is caused by the laser ablation due to dielectric breakdown.
Keywords
Time-resolved X-ray diffraction , Laser ablation , Picosecond , Silicon
Journal title
Applied Surface Science
Serial Year
2003
Journal title
Applied Surface Science
Record number
999773
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