Author/Authors :
C.S. Sandu، نويسنده , , V.S. Teodorescu، نويسنده , , C. Ghica، نويسنده , , B. Canut، نويسنده , , M.G. Blanchin، نويسنده , , J.A. Roger، نويسنده , , A. Brioude*، نويسنده , , T. Bret، نويسنده , , P. Hoffmann، نويسنده , , C. Garapon، نويسنده ,
Abstract :
We have successfully applied laser annealing to sol–gel deposited SnO2:Sb thin films in order to achieve their crystallization. The as-deposited films are quasi-amorphous and electrically non-conductive. After laser annealing they crystallize and become conductive. This paper presents a comparative study of the laser annealed films and shows the influence of the irradiation parameters on the crystallization process and the electrical behavior of the films. Our results are quite promising in view of applying this kind of treatment to films deposited on thermally sensitive substrates (e.g. polymers).
Keywords :
Sol–gel , Thin films , Laser beam annealing , Transmission electron microscopy