Title of article :
Atomic structure and magnetic properties of Mn on InAs(1 0 0)
Author/Authors :
K Hricovini، نويسنده , , P De Padova، نويسنده , , C Quaresima، نويسنده , , P Perfetti، نويسنده , , R Brochier، نويسنده , , C Richter، نويسنده , , A. Ilakovac، نويسنده , , O Heckmann، نويسنده , , L Lechevallier، نويسنده , , P Bencok، نويسنده , , P Le Fevre، نويسنده , , C Teodorescu، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
9
From page :
17
To page :
25
Abstract :
We have studied Mn/InAs(0 0 1)(4×2)c(8×2) interfaces by high-resolution core-level spectroscopy, surface EXAFS and by X-ray magnetic circular dichroism (XMCD). The growth of manganese is found to depend strongly on the temperature of InAs. At low temperatures (room and liquid nitrogen temperature (LNT)), Mn atoms form the compound MnAs in the surface region leaving metallic In islands on the surface. Manganese deposition at 530 K results in strong diffusion of Mn into the substrate followed by formation of the compound In1−xMnxAs in which Mn atoms are substituted in indium-sites. We show by XMCD that In1−xMnxAs is ferromagnetic with a relatively high value of an average magnetic moment per Mn atom, exceeding 0.7 μB at low temperatures and with an individual magnetic moment of about 2.4 μB. The temperature dependence of the Mn magnetic moment follows the Brillouin function and it drops to zero at temperature of about 150 K for measurements in an external magnetic field of 5 T.
Keywords :
manganese , Indium arsenide , Diluted magnetic semiconductor , XMCD
Journal title :
Applied Surface Science
Serial Year :
2003
Journal title :
Applied Surface Science
Record number :
999982
Link To Document :
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