Title of article :
STM and STS on single dopants and Au-induced chains at the Si(1 1 1) surface
Author/Authors :
C. Sürgers، نويسنده , , M. Sch?ck، نويسنده , , T. Trappmann، نويسنده , , H. v. L?hneysen، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
5
From page :
105
To page :
109
Abstract :
The electronic properties of single P- and B-dopants at the cleaved Si(1 1 1) surface of Czochralski-grown single crystals are investigated by scanning tunneling microscopy (STM) and spectroscopy at room temperature. Both types of dopants (donors or acceptors) can be identified by a specific voltage-dependent image contrast. The local variation of the electronic structure is confirmed by tunneling spectra taken at and away from the dopant site. Furthermore, Au-induced chainlike structures on vicinal Si(1 1 1) substrates are prepared by deposition of submonolayer coverages of gold. The tunneling spectra exhibit distinct features on the different types of protrusions which suggests that they arise from different types of atoms, i.e. Si or Au.
Keywords :
Reconstruction , Scanning tunneling microscopy , Silicon surfaces , Scanning tunneling spectroscopy , Dopants
Journal title :
Applied Surface Science
Serial Year :
2003
Journal title :
Applied Surface Science
Record number :
999998
Link To Document :
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