Conventional and Pendeo-Epitaxial Growth of Non-Polar GaN)11-20( Thin Films on AlN/4H-SiC)11-20( Substrates and Their Characterization and Reduction in Defect Density
Author :
Robert F. Davis استاد راهنما
University :
Virginia Polytechnic Institute and state University
Grade :
نامعلوم
Major :
Master of Science )Program Materials Science and Engineering(
Number of pages :
0
Publish Date :
2005
Keyword :
Thin Film Growth , Non-polar GaN , Growth Rates , Pendeo-Epitaxy , MOVPE , Defect Density Reduction , TEM , SEM , AFM
