Title :
A TRANSIENT MODEL FOR INSULATED GATE BIPOLAR TRANSISTORS )IGBTs(
Author :
Amro El-Jaroudi استاد مشاور , ietrich Langer استاد مشاور , Mahmoud El Nokali استاد راهنما
University :
university of pittsburgh
Major :
Doctor of Philosophy )Electrical Engineering(
Keyword :
MOSFET channel , PT IGBT , Modeling IGBT , Depletion capacitance
