DocumentCode
20989
Title
A Novel In-Situ Method for Inhibiting Surface Roughening during the Thermal Oxide Desorption Etching of Silicon and Gallium Arsenide
Author
Peter J. Gielisse استاد مشاور , Reginald J. Perry استاد مشاور , Jim. P. Zheng استاد راهنما
University
The Florida State University
Grade
نامعلوم
Major
PhD )Electrical and Computer Engineering, Department of(
Number of pages
0
Publish Date
2005
Keyword
Gallium , GaAS , Desorption , arsenide , thermal , Silicon
Note
01
Language
انگليسي
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