Title :
Electrical properties of ultra thin Al2O3 and HfO2 films as gate dielectrics in MOS technology
Author :
Fiory Anthony استاد مشاور , Ravindra N. M. استاد راهنما
University :
Van Houten Library )new Jersey Institute Of Technology(
Major :
Master of Science )Materials Science and Engineering(
Keyword :
atomic layer deposition
