DocumentCode :
2810
Title :
Effects of implementation of decaborane ions in silicon
Author :
Chin Ken K. استاد مشاور , Sosnowski Marek استاد راهنما
University :
Van Houten Library )new Jersey Institute Of Technology(
Grade :
دكتري
Major :
Doctor of Philosophy )Materials Science and Engineering(
Number of pages :
0
Publish Date :
2003
Keyword :
decaborane , Implantation , MD simulation , cluster ions , sputtering yield , TED
Note :
01
Language :
انگليسي
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=17&DC=2810
